![]() Lithographic apparatus and device manufacturing method.
专利摘要:
公开号:NL2010954A 申请号:NL2010954 申请日:2013-06-12 公开日:2013-12-23 发明作者:Paul Wit;Martinus Leenders;Joost Ottens;Tom Zutphen;William Drent 申请人:Asml Netherlands Bv; IPC主号:
专利说明:
LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD FIELD The present invention relates to a lithographic apparatus and a device manufacturing method. BACKGROUND [0001] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. including part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Conventional lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate. [0002] The lithographic apparatus may be provided with an actuator to move a certain part of the apparatus by creating a magnetic field, for example, the apparatus may be provided with a positioner to position a substrate. A component of the apparatus may be located in the magnetic field of the actuator. The magnetic field may cause magnetostriction in the component. Magnetostriction is a property of ferromagnetic materials that cause them to change their shape or dimension during the process of magnetization. The change in shape or dimension may harm the operation of the component and therefore harm the operation of the lithographic apparatus. SUMMARY [0003] It is desirable to provide a lithographic apparatus with a decreased sensitivity to a magnetic field. [0004] According to an embodiment of the invention, there is provided a lithographic apparatus, comprising a moveable body arranged for creating a magnetic field, a component and a counteracting device for counteracting an influence of the magnetic field on the component. The moveable body is moveable in a plane, relative to the component and the counteracting device. The component has a surface facing the plane. The counteracting device is between the moveable body and the component. [0005] By counteracting the influence of the magnetic field on the component, the performance of the lithographic apparatus is affected less by movement of the moveable body. [0006] According to an embodiment of the invention, there is provided a device manufacturing method for projecting a patterned beam of radiation with a projection system onto a substrate. The method comprises moving the substrate with a moveable body in a plane relative to the projection system and a counteracting device. The method further comprises creating a magnetic field using the moveable body while moving, and counteracting an influence of the magnetic field on the projection system with the counteracting device being between the moveable body and the projection system. [0007] By counteracting the influence of the magnetic field on the projection system, the performance of the lithographic apparatus is affected less by movement of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS [0008] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: [0009] Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; and, [0010] Figure 2 depicts a detail of Figure 1 with the counteracting device according to an embodiment to counteract an influence of the magnetic field on the component. DETAILED DESCRIPTION [0011] Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. UY radiation or any other suitable radiation), a support structure (e.g. a mask table) MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioning device PM configured to accurately position the patterning device in accordance with certain parameters. The apparatus also includes a substrate table (e.g. a wafer table) WT or "substrate support" constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioning device PW configured to accurately position the substrate in accordance with certain parameters. The apparatus further includes a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g. including one or more dies) of the substrate W. [0012] The illumination system may include various ty pes of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation. [0013] The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.” [0014] The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section so as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit. [0015] The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix. [0016] The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”. [0017] As here depicted, the apparatus is of a transmissive type (e g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask). [0018] The lithographic apparatus may be of a type having two (dual stage) or more substrate tables or "substrate supports" (and/or two or more mask tables or "mask supports"). In such “multiple stage” machines the additional tables or supports may be used in parallel, or preparatory steps may be carried out on one or more tables or supports while one or more other tables or supports are being used for exposure. [0019] The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the patterning device (e.g. mask) and the projection system. Immersion techniques can be used to increase the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that a liquid is located between the projection system and the substrate during exposure. [0020] Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system. [0021] The illuminator IL may include an adjuster AD configured to adjust the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section. [0022] The radiation beam B is incident on the patterning device (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning device. Having traversed the patterning device (e.g. mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device (e.g. mask) MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a patterning device library, or during a scan. In general, movement of the support structure (e.g. mask table) MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioning device PM. Similarly, movement of the substrate table WT or "substrate support" may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the support structure (e.g. mask table) MT may be connected to a short-stroke actuator only, or may be fixed. Patterning device (e.g. mask) MA and substrate W may be aligned using patterning device alignment marks Ml, M2 and substrate alignment marks PI, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the patterning device (e.g. mask) MA, the patterning device alignment marks may be located between the dies. [0023] The depicted apparatus could be used in at least one of the following modes: 1. In step mode, the support stmcture (e g. mask table) MT or "mask support" and the substrate table WT or "substrate support" are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT or "substrate support" is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scan mode, the support structure (e.g. mask table) MT or "mask support" and the substrate table WT or "substrate support" are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT or "substrate support" relative to the support structure (e.g. mask table) MT or "mask support" may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion. 3. In another mode, the support structure (e.g. mask table) MT or "mask support" is kept essentially stationary holding a programmable patterning device, and the substrate table WT or "substrate support" is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or "substrate support" or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above. [0024] Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed. [0025] The lithographic apparatus is provided with a moveable body. The moveable body may be the support structure for holding the patterning device MA or the wafer table WT for holding the substrate W. The moveable body is moveable in a plane, in this case the XY-plane. The support structure and the wafer table may move in the XY-plane to expose a pattern of the patterning device via the projection system PS on different target portions of the substrate W. [0026] To move the moveable body, the moveable body may be provided with an actuator, such as the first positioner PM or the second positioner PW. As shown in Figure 2, the second positioner PW may be provided with a long stroke forcer LSF and a short stroke forcer SSF. The long stroke forcer LSF is part of the long-stroke module for moving the substrate table WT with the substrate W relative to the projection system PS. The short stroke forcer SSF is part of the short-stroke module for moving the substrate table WT relative to the long-stroke module. [0027] The actuator may create a magnetic field, for example by a magnet or by coils through which an electrical current flows. [0028] Other objects in the lithographic apparatus may create magnetic fields. Such objects may comprise an electric component, a magnetic component and an electric wire. These objects may be mounted onto the moveable body. [0029] Figure 2 shows a metrology frame MF which may be a reference frame to other components of the lithographic apparatus. The position sensor IF, shown in Figure 1, for measuring a position of the wafer table WT may be mounted on the metrology frame MF. In Figure 2, a sensor SN is used to determine a position of the projection system PS relative a sensor scale SNS which is connected to the metrology frame MF with sensor scale bracket SNB. The sensor SN may be sensitive to the magnetic field created by the long stroke forcer LSF and the short stroke forcer SSF. The sensitivity may be caused by magnetostriction. [0030] Magnetostriction is a property of ferromagnetic materials that cause them to change their shape or dimensions during the process of magnetization. Ferromagnetic materials have a structure that is divided into domains, each of which is a region of uniform magnetic polarization. When a magnetic field is applied, the boundaries between the domains shift and the domains rotate, causing a change in the material's dimensions. On magnetization by a magnetic field, the ferromagnetic material may undergo changes in volume e.g. of the order 10"6 [0031] The sensor SN may comprise ferro-magnetic material, making the sensor SN sensitive to magnetostriction. When the sensor SN is in the magnetic field of the moveable body, the size or orientation of the sensor SN may change. This change may change the outcome of the position measurement by the sensor SN. This may deteriorate performance of the sensor SN. [0032] One or more of the projection system PS, the sensor scale SNS, the sensor scale bracket SNB and the metrology frame MF may comprise ferromagnetic material. All of these may be considered as components. These components may have a surface facing the plane in which the moveable body moves. The ferromagnetic material may, for example, be invar which may be chosen for its low thermal expansion properties in high precision components. When the ferromagnetic material is in a magnetic field, the dimension of the ferromagnetic material may change. The change of dimension may harm the working of the component. [0033] The magnetic field on the component changes over time, when the moveable body is moving relative to the component. The amount of magnet field around the component may depend on the distance of the moveable body relative to the component, or it may depend on the amount of electrical current flowing through the moveable body. [0034] The apparatus may be provided with a counteracting device CD to counteract an influence of the magnetic field on the sensor SN or one of the other components. The counteracting device CD may comprise a magnetometer MGM to measure the magnetic field. The magnetometer MGM may be a Hall effect magnetometer. The magnetometer MGM may comprise a coil for measuring the magnetic field. The magnetometer MGM may be a NMR magnetometer, a SQUID magnetometer or a Flux gate magnetometer. The magnetometer MGM may be a multi-axes magnetometer to measure the magnetic field in multi directions. The magnetometer MGM may be positioned between the actuator creating the magnetic field and the component, such as sensor SN, being sensitive to it. This may have the benefit that the magnetometer MGM may accurately measure the magnetic field that surrounds the component. The counteracting device CD may comprise multiple magnetometers MGM for measuring the magnetic field. [0035] The lithographic apparatus comprises a controller CNT for controlling a position of the moveable body. The controller may provide a control signal to the second positioner PW to move the substrate table WT to a desired position relative to the projection system PS or another component. The magnetometer MGM may provide the controller CNT with a measurement signal based on the amount of magnetic field measured by the magnetometer MGM between the moveable body and the component. A relation between the amount of magnetic field and the deformation of the component, such as the sensor SN, may be determined by a calibration or calculations. The controller CNT may use the measurement signal and, based on the relation, adjust the position of the moveable body to correct for the deformation of the component. The moveable body may be positioned accurately, independently of the magnetic field. The counteracting device CD has counteracted the influence of the magnetic field on the component by making the performance of the lithographic apparatus less dependent on the magnetic field. [0036] The counteracting device CD may comprise a processor CAP to calculate a correction signal on the basis of the magnetic field measured by the magnetometer MGM to counteract an influence of the magnetic field. The counteracting device CD may comprise a memory MTF operable connected with the processor CAP for storing a relation between the magnetic field and a deformation of the component. The relation may comprise, for example, data as a function of the magnetization measured by the magnetometer MGM. The relation may, for example, be a certain amount of nanometers in a certain direction per milli-Tesla measured with the magnetometer MGM. The relation may be calibrated by varying the magnetic field created by the actuator and measuring a variance in the sensor signal received from the sensor SN. The relation may be calibrated by varying and measuring the position of the moveable body in the lithographic apparatus and measuring a variance in the sensor signal received from the sensor SN. [0037] The processor CAP may be operable connected to the controller CNT to counteract an influence of the magnetic field of the actuator. In an example, the component is a position sensor attached to the metrologyframe MF and involved in measuring the position of the substrate W relative to the projection system PS. The signal of the magnetometer MGM is used by the processor CAP to correct the sensor signal received from the sensor SN, since the sensor SN may deform by the magnetic field. The controller CNT may now determine a position of the substrate W relative to the projection system PS, which is corrected for influence of the magnetic field. In another example, the component is involved in measuring the position of the mask above the projection system PS. The signal of a magnetometer MGM located above the projection system PS may be used by the processor CAP to correct the sensor signal received from the sensor SN. [0038] The counteracting device may also comprise a magnetic field generator to create a contra magnetic field that counteracts an influence of the magnetic field. The magnetic field generator may be used if it is difficult to correct a deformation caused by magnetostriction, for example if the component is a mount for a lens of the projection system PS. If the mount is deformed by the magnetic field, the working of the projection system PS may deteriorate and it may be difficult to correct for the deformation. It may therefore be easier to counteract the magnetic field with a magnetic field created in the opposite direction with, for example, an electromagnet and/or coil. The amount of magnetic field created by the magnetic field generator may be based on the measurement value of the magnetometer MGM. [0039] In an embodiment, the amount of magnetic field created by the magnetic field generator may be based on a position of the moveable body. In this embodiment, the magnetometer MGM may be omitted The amount of magnetic field around the component may be determined in a measurement setup in which a magnetometer is temporarily between the moveable body and the component. The moveable body is moved and the magnetic field is measured. A relation between the position of the moveable member and the amount of magnetic field is determined. Alternatively, the relation may be determined by calculations. After the relation is determined, the magnetometer may be removed. The relation may be stored in the memory MTF. Depending on the position of the moveable member, the amount of contra magnetic field generated by the magnetic field generator is adjusted. [0040] The counteracting device CD may comprise a ferro-magnetic material. With ferromagnetic material between the moveable body and the component, the magnetic field may be at least partly blocked from reaching the component. As a result, the magnetic field has less influence on the component. [0041] It was discovered that a ferro-magnetic material having less than 0.1 % carbon is very effective in blocking the magnetic field. In an embodiment 0.02 - 0.05% carbon is used, which may provide effective blocking at limited costs. [0042] The counteracting device CD may have a plurality of layers. The amount and type of layers may be optimized to effectively block the magnetic field from reaching the component. A first layer may have a first magnetic saturation and a first magnetic permeability. A second layer may have a second magnetic saturation and a second magnetic permeability. An effective blocking is achieved when the first magnetic saturation is higher than the second magnetic saturation, and the first magnetic permeability is lower than the second magnetic permeability. The second layer may be closer to the component than the first layer. The high magnetic saturation of the first layer gives the counteracting device CD a large capacity for magnetic flux, while the high permeability of the second layer provides a good barrier preventing magnetic flux to cross. Such a counteracting device CD may block a large amount of magnetic flux for a long time. When using a plurality of layers with different magnetic properties, such permeability and saturation, cheaper materials may be used. Materials that have all the desired magnetic properties may be very expensive. [0043] The moveable body is moveable relative to the counteracting device CD. As shown in Figure 2, for example, the substrate table WT is moveable relative to the counteracting device CD. Since the counteracting device CD is not on the moveable body, the mass of the moveable body is minimized, which improves the dynamics of the moveable body. Further, the counteracting device CD may be optimized around the component to optimally reduce the influence of the magnetic field on the component. [0044] Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion", respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers. [0045] Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography, a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured. [0046] The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams. [0047] The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the clauses set out below. Other aspects of this invention are set out as in the following numbered clauses: 1. A lithographic apparatus, comprising a moveable body arranged for creating a magnetic field; a component; and a counteracting device for counteracting an influence of the magnetic field on the component, wherein the moveable body is moveable in a plane, relative to the component and the counteracting device, wherein the component has a surface facing the plane, wherein the counteracting device is between the moveable body and the component. 2. The lithographic apparatus according to clause 1, comprising a controller for controlling a position of the moveable body in the plane, wherein the counteracting device comprises a magnetometer to measure the magnetic field, wherein the controller is arranged to adjust a position of the moveable body based on a measurement value of the magnetometer. 3. The lithographic apparatus according to clause 1, wherein the counteracting device comprises a magnetometer to measure the magnetic field, and a magnetic field generator to create a contra magnetic field that counteracts the influence of the magnetic field, wherein the magnetic field generator is arranged to create the contra magnetic field based on a measurement value of the magnetometer. 4. The lithographic apparatus according to clause clauses 2-3. wherein the magnetometer comprises a coil for measuring the magnetic field. 5. The lithographic apparatus according to any of clauses 2-3. wherein the magnetometer is a multi-axes magnetometer to measure the magnetic field in multi directions. 6. The lithographic apparatus according to clause 1, wherein the counteracting device comprises a magnetic field generator to create a contra magnetic field that counteracts an influence of the magnetic field, the contra magnetic field being based on a position of the moveable body. 7. The lithographic apparatus according to clauses 2-6, wherein the counteracting device comprises a memory' for storing a relation between the magnetic field and a deformation of the component. 8. The lithographic apparatus according to any of the preceding clauses, wherein the component comprises one of a projection system, a sensor and a metrology frame. 9. The lithographic apparatus according to any of the preceding clauses, wherein the moveable body is provided with an actuator for moving the moveable body relative to the component, wherein the actuator is arranged to create the magnetic field. 10. The lithographic apparatus according to any of the preceding clauses, wherein the lithographic apparatus is an optical lithographic apparatus comprising an illumination system and a projection system, wherein the illumination system provides a beam of electromagnetic radiation and the projection system is configured to project the electromagnetic radiation onto a target portion of a substrate, wherein the moveable body is a positioner to position a substrate table constructed to hold the substrate relative to the projection system. 11. The lithographic apparatus of clause 10, wherein the component comprises a position measurement sensor for measuring a position of the substrate relative to the projection system, and the counteracting device is arranged to counteract an influence of the magnetic field of the positioner on the position measurement sensor. 12. The lithographic apparatus according to any of the preceding clauses, wherein the counteracting device comprises a ferro-magnetic material. 13. The lithographic apparatus according to clause 12, wherein the ferro-magnetic material comprises 0.02-0.05% carbon. 14. The lithographic apparatus according to clauses 12-13, wherein the counteracting device comprises a plurality of layers. 15. The lithographic apparatus according to clause 14, wherein the plurality of layers comprises a first layer and a second layer, the first layer having a first magnetic saturation and a first magnetic permeability, the second layer having a second magnetic saturation and a second magnetic permeability, wherein the first magnetic saturation is higher than the second magnetic saturation, and wherein the first magnetic permeability is lower than the second magnetic permeability. 16 A device manufacturing method for projecting a patterned beam of radiation with a projection system onto a substrate, wherein the method comprises moving the substrate with a moveable body in a plane relative to the projection system and a counteracting device; creating a magnetic field using the moveable body while moving; and counteracting an influence of the magnetic field on the projection system with the counteracting device being between the moveable body and the projection system.
权利要求:
Claims (1) [1] What is claimed is: 1. A lithographic device comprising: an exposure device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
类似技术:
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2015-06-10| WDAP| Patent application withdrawn|Effective date: 20140808 |
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